4 amps 600volts n-channel mosfet description the et4N60 nchannel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switchi ng applications such as switching regulators, switchin g converters, solenoid, motor drivers, relay drivers . features r ds(on) =2.50@v gs = 10 v low gate charge ( typical 16nc) high ruggedness fast switching capability avalanche energy specified improved dv/dt capability symbol absolute maximum ratings (t c =25 ,unless otherwise specified) ratings parameter symbol to220 to220f to252 units drainsource voltage v dss 600 v gatesource voltage v gss 30 v t c =25 4.0 4.0 2.8 a drain currenet continuous t c =100 i d 2.4 2.4 1.8 a drain current pulsed (note 1) i dp 16 16 11.2 a repetitive (note 1) e ar 10.4 4.9 mj avalanche energy single pulse (note 2) e as 180 210 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns t c =25 104 34 49 w total power dissipation derate above 25 p d 0.83 0.27 0.39 w/ beijing estek electronics co.,ltd 1 4N60 www..net
junction temperature t j +150 storage temperature t stg 55~+150 drain current limited by maximum junction temperatu re. thermal characteristics ratings units parameter symbol to220 to220f to252 thermal resistance junctionambient r thja 62.5 50 110 thermal resistance, casetosink typ. r thcs 0.5 thermal resistance junctioncase r thjc 1.2 3.65 2.56 /w electrical characteristics t j =25 ,unless otherwise specified. 1. repetitive rating : pulse width limited by maxim um junction temperature 2. l = 20 mh, i as = 4.0 a, v dd = 50v, r g = 25 , starting tj = 25c 3. i sd 4.0 a, di/dt 200a/ s, v dd bv dss , starting tj = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature parameter symbol test conditions min typ max units off characteristics drainsource breakdown voltage bv dss v gs =0v,i d =250a 600 v v ds =600v,v gs =0v 1 a zero gate voltage drain current i dss v ds =480v,t c =125 10 a forward v gs =30v,v ds =0v 100 na gatebody leakage current reverse i gss v gs =30v,v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a 0.7 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drainsource onresistance r ds(on) v ds =10v, i d =2.0a(to220,to220f) i d =1.4a(to252) 2.0 2.5 dynamic characteristics input capacitance c iss 560 pf output capacitance c oss 55 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1mh z 7 pf switching characteristics turnon delay time t d(on) 10 ns rise time t r 40 ns turnoff delay time t d(off) 40 ns fall time t f v dd =300v, i d =4.0a(to220,to220f) i d =2.8a(to252) r g =25 (note 4, 5) 50 ns total gate charge q g 16 nc gatesource charge q gs 2.5 nc gatedrain charge q gd v ds =480v, i d =4.0a(to220,to220f) i d =2.8a(to252) v gs =10v (note 4, 5) 6.5 nc drain-source diode characteristics drainsource diode forward voltage v sd v gs =0v i sd =4.0a(to220,to220f) i sd =2.8a(to252) 1.4 v to220,to220f 4.0 continuous drainsource current i sd to252 2.8 a to220,to220f 16.0 pulsed drainsource current i sm to252 11.2 a reverse recovery time t rr 300 ns reverse recovery charge q rr i sd =4.0a, di sd /dt=100a/s (note 4) 2.0 c beijing estek electronics co.,ltd 2 4N60 www..net
typical characteristics beijing estek electronics co.,ltd 3 4N60 www..net
typical characteristics (continued) figure 9-2. maximum safe operating area for to220f figure 9-1. maximum safe operating area for to220 figure 9-3. maximum safe operating area for to251, to252 figure 10. maximum drain current vs case temperature to220,to220f to251,to252 4 beijing estek electronics co.,ltd 4N60 www..net
typical characteristics (continued) figure 11-1. transient thermal response curve to220 figure 11 - 2 . transient thermal re sponse curve for t o220f figure 11 - 3 . transient thermal response curve for t o2 52 beijing estek electronics co.,ltd 5 4N60 www..net
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